TSM60NB1R4CH C5G
Manufacturer:
Taiwan Semiconductor
Mfr.Part #:
TSM60NB1R4CH C5G
Datasheet:
Description:
MOSFETs TO-251-3 Through Hole N-Channel number of channels:1 28.4 W 600 V Continuous Drain Current (ID):3 A 7.12 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 9 months ago) |
| Power Dissipation | 28.4 W |
| Number of Channels | 1 |
| Input capacitance | 257.3 pF |
| Continuous Drain Current (ID) | 3 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 7.12 nC |
| Drain to Source Resistance | 1 Ω |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 9 months ago) |
| Gate to Source Threshold Voltage | 3.3 V |
Stock: 12
Distributors
pcbx
pcbxUnit Price$0.52147
Ext.Price$0.52147
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.52147 | $0.52147 |
| 10 | $0.41424 | $4.14240 |
| 25 | $0.38089 | $9.52225 |
| 50 | $0.35023 | $17.51150 |
| 100 | $0.32204 | $32.20400 |
| 300 | $0.29612 | $88.83600 |
| 500 | $0.27228 | $136.14000 |